Paper Title:
Enhanced Infrared Normal Spectral Emissivity of Microstructured Silicon at 100 to 200°C
  Abstract

The infrared normal spectral emissivity of microstructured silicon prepared by femtosecond laser was measured for the middle infrared waveband at temperature range 100 to 200°C. Compared to that of flat silicon, emissivity was enhanced over the entire wavelength range. For a sample with different spike height, the minimum emissivity at a temperature of 100°C is more than 0.6. Although the average emissivity is less than Nextel- Velvet-811-21 Coating , it can be used stably at more wide temperature ranges. These results show the potential for microstructured silicon to be used as a flat blackbody source or silicon-based devices.

  Info
Periodical
Advanced Materials Research (Volumes 295-297)
Chapter
Chapter 1: Materials Properties
Edited by
Pengcheng Wang, Liqun Ai, Yungang Li, Xiaoming Sang and Jinglong Bu
Pages
886-889
DOI
10.4028/www.scientific.net/AMR.295-297.886
Citation
G. J. Feng, Y. Wang, Y. Li, T. T. Guo, "Enhanced Infrared Normal Spectral Emissivity of Microstructured Silicon at 100 to 200°C", Advanced Materials Research, Vols. 295-297, pp. 886-889, 2011
Online since
July 2011
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Price
$32.00
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