Paper Title:
Heteroepitaxy of ZnO Films on Epi-GaN/Al2O3(0001) by MOCVD
  Abstract

Single crystalline ZnO thin films have been deposited on epi-GaN/sapphire (0001) substrates by the metalorganic chemical vapour deposition (MOCVD) method. The structural and optical properties of the ZnO films were investigated in detail. The film prepared at 600°C was epitaxial single crystalline with the wurtzite structure of pure ZnO and a single orientation of (0002) direction. High-resolution transmission electron microscopy was used to investigate the interface area, and a clear orientation relationship of ZnO (0001) || GaN (0001) and ZnO [] || GaN [] was obtained. The average transmittance for the samples in the visible range was over 75%.

  Info
Periodical
Advanced Materials Research (Volumes 299-300)
Edited by
Jianzhong Wang and Jingang Qi
Pages
444-447
DOI
10.4028/www.scientific.net/AMR.299-300.444
Citation
Q. Q. Yu, J. Ma, C. N. Luan, L. Y. Kong, Z. Zhu, "Heteroepitaxy of ZnO Films on Epi-GaN/Al2O3(0001) by MOCVD", Advanced Materials Research, Vols. 299-300, pp. 444-447, 2011
Online since
July 2011
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Price
$32.00
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