Paper Title:
Optimized Simulation for GaN Growth in Vertical HVPE Reactor
  Abstract

The paper reports the setting up of a model of fluid dynamic for GaN HVPE system and the simulation. The deposition of GaN with the variation of the gas flow inlet velocities is investigated. The influence of diffusion coefficient on the deposition of GaN is also discussed. It is found that the influence of the gas flow inlet velocities on the deposition is large and the influence of diffusion coefficient on the deposition of GaN is small in vertical HVPE.

  Info
Periodical
Advanced Materials Research (Volumes 301-303)
Chapter
Chapter 1: Material Science and Technology
Edited by
Riza Esa and Yanwen Wu
Pages
116-120
DOI
10.4028/www.scientific.net/AMR.301-303.116
Citation
C. Z. Zhao, L. Y. Yu, C. X. Tang, M. Li, J. X. Zhang, "Optimized Simulation for GaN Growth in Vertical HVPE Reactor", Advanced Materials Research, Vols. 301-303, pp. 116-120, 2011
Online since
July 2011
Export
Price
$32.00
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