Paper Title:
Design of High Precision Sunlight Intensity Measurement Device
  Abstract

Photoelectric detection technology is a kind of new technology of non-contact measure, and it is one of the most important means and methods of modern detection technology. The design of the high precision sunlight intensity measurement device is based on photoelectric detection technology. The sunlight intensity energy is received by the photodiode, and then it is transferred into electrical energy, the current. After the filtration and amplification, the current is converted into digital signal by the ICL7106 A/D converter. Ultimately, the accurate value is displayed on the LED digital tubes. The value shows the sunlight intensity at the moment of the measurement. The experimental result shows that the sunlight intensity is different at the different times.

  Info
Periodical
Advanced Materials Research (Volumes 301-303)
Chapter
Chapter 3: Mechanical, Electronic and Material Engineering
Edited by
Riza Esa and Yanwen Wu
Pages
1635-1638
DOI
10.4028/www.scientific.net/AMR.301-303.1635
Citation
S. W. Chen, "Design of High Precision Sunlight Intensity Measurement Device", Advanced Materials Research, Vols. 301-303, pp. 1635-1638, 2011
Online since
July 2011
Authors
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Xiao Lan Liu, Jin Cai Lin, Jin Hang Hu
Chapter 14: Sensor Technology
Abstract:This paper presents a novel Electromagnetic field (E-Field) probe structure employing a printed dipole antenna to get isotropic pattern. The...
1877
Authors: Qing Hong Zhou, Qing Feng Liu
Chapter 9: Related Themes
Abstract:The high frequency induction heating power supply has received increasing attention from researchers, multilevel converter is a high voltage...
2642
Authors: Yuan Ming Huang, Qing Lan Ma, Bao Gai Zhai
Chapter 6: Devices
Abstract:Porous silicon based visible light photodetectors with the characteristic structures of Al/porous silicon/Si were developed by evaporating...
341
Authors: Shi Yuan Zhou, Kai Zhang, Dinguo Xiao, Chun Guang Xu, Bo Yang
Chapter 4: Advanced Applications of Electrical Engineering Development
Abstract:SiC diode (Silicon Carbide Diode) is a newly commercial available Schottky barrier diode with zero reverse-recovery-time, which is a perfect...
115