Paper Title:
Photoluminescence Properties of InGaN/GaN Multiple Quantum Well Light Emitting Diodes by Metalorganic Chemical Vapor Deposition
  Abstract

Luminescence properties of blue emission InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs), grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD), were studied by time-resolved photoluminescence (TRPL) spectroscopic technique. Samples involved have similar basic structures of three QWs but different well-composition and barrier/well dimensions. TRPL results show that PL intensity and decay time increase with the number of QWs and the indium composition. Correlation of physical properties with crystalline perfection open the way for optimized designs of InGaN MQW LED, with controlled the indium composition and QW numbers.

  Info
Periodical
Advanced Materials Research (Volumes 306-307)
Chapter
Chapter 9: Nano Materials
Edited by
Shiquan Liu and Min Zuo
Pages
1133-1137
DOI
10.4028/www.scientific.net/AMR.306-307.1133
Citation
T. W. Kuo, L. M. Kong, Z. C. Feng, W. Liu, S. J. Chua, Y. S. Huang, "Photoluminescence Properties of InGaN/GaN Multiple Quantum Well Light Emitting Diodes by Metalorganic Chemical Vapor Deposition", Advanced Materials Research, Vols. 306-307, pp. 1133-1137, 2011
Online since
August 2011
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Price
$32.00
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