Paper Title:
Correlation of Structural and Optical Properties of nc-Ge/a-Si Multilayers Grown by Ion Beam Sputtering
  Abstract

The nc-Ge/a-Si multilayer structures were fabricated by ion beam sputtering technique on silicon substrates at temperature of 400 °C. Raman scattering spectroscopy, atomic force microscopy (AFM) and room temperature photoluminescence were used to characterize the structure and optical property of the samples. It was found that the nc-Ge/a-Si multilayer sample can be obtained when the Ge sublayer is 3 nm. The room temperature photoluminescence was observed and the luminescent peak is located at 685 nm. Compared with the a-Ge/a-Si film, the intensity of PL of the nc-Ge/a-Si multilayer film becomes stronger due to the higher volume fraction of crystallized component.

  Info
Periodical
Advanced Materials Research (Volumes 306-307)
Chapter
Chapter 9: Nano Materials
Edited by
Shiquan Liu and Min Zuo
Pages
1300-1303
DOI
10.4028/www.scientific.net/AMR.306-307.1300
Citation
C. Song, R. Huang, X. Wang, J. Song, Y. Q. Guo, "Correlation of Structural and Optical Properties of nc-Ge/a-Si Multilayers Grown by Ion Beam Sputtering", Advanced Materials Research, Vols. 306-307, pp. 1300-1303, 2011
Online since
August 2011
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$32.00
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