Paper Title:
Synchrotron Radiation X-Ray Absorption and Optical Studies of Cubic SiC Films Grown on Si by Chemical Vapor Deposition
  Abstract

Synchrotron radiation extended X-ray absorption fine structure and Raman scattering were used to characterize a series of 3C-SiC films grown on Si (100) by chemical vapor deposition. EXAFS can probe the physical and chemical structure of matters at an atomic scale and Raman parameters such as intensity, width, peak frequency and polarization provide fruitful information on the crystal quality and properties of these film materials.

  Info
Periodical
Advanced Materials Research (Volumes 306-307)
Chapter
Chapter 3: Optical and Electronic Materials
Edited by
Shiquan Liu and Min Zuo
Pages
167-170
DOI
10.4028/www.scientific.net/AMR.306-307.167
Citation
Y. L. Tu, Y. H. Huang, L. M. Kong, K. Y. Lee, L. Y. Jang, C. C. Tin, C. W. Liu, Z. C. Feng, "Synchrotron Radiation X-Ray Absorption and Optical Studies of Cubic SiC Films Grown on Si by Chemical Vapor Deposition", Advanced Materials Research, Vols. 306-307, pp. 167-170, 2011
Online since
August 2011
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Price
$32.00
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