Paper Title:
Fabrication of Condenser Microphones on Silicon on Insulator Wafer
  Abstract

A silicon condenser microphone on an SOI (silicon on insulator) substrate using only one photo mask was fabricated. This microphone consists of a diaphragm with the thickness of 20 μm and the diameter of 2 mm, a SiO2 insulative spacer (4-μm-thick buried oxide), and a 450-μm-thick silicon back plate with the meshed structures having extremely small (60 μm) hexagonal shaped acoustic holes. The gap between the 20-μm-thick silicon diaphragm and the back plate is 4 μm, which is determined by the thickness of the buried oxide in the SOI wafer. This microphone was confirmed to function as a static pressure sensor. The SOI microphone was also connected to an amplifier circuit, and exposed to the sound pressure of 110 dB at the frequency of 1 kHz. The microphone clearly responded to the input sound, and the output ac voltage of approximately 40 V was detected.

  Info
Periodical
Advanced Materials Research (Volumes 306-307)
Chapter
Chapter 3: Optical and Electronic Materials
Edited by
Shiquan Liu and Min Zuo
Pages
193-200
DOI
10.4028/www.scientific.net/AMR.306-307.193
Citation
S. Hishinuma, N. Kimori, Y. Kumai, K. Oku, T. Takahashi, D. Irokawa, E. Sugizaki, N. Watanabe, T. Ikehara, R. Maeda, Y. Nishioka, "Fabrication of Condenser Microphones on Silicon on Insulator Wafer", Advanced Materials Research, Vols. 306-307, pp. 193-200, 2011
Online since
August 2011
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Price
$32.00
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