Paper Title:
Growth of p-Type AlN Crystals by C and Si Codoping
  Abstract

Based on our earlier theoretical investigation, p-type C:Si codoped AlN crystals were grown on SiC substrates by a sublimation method in a improved growth reactor. Hall-effect measurement shows that the AlN crystals have a high hole density of 1.4×1014 cm-3 and mobility of 52 cm2V-1s-1 in spite of the high resistivity (896 Ω•cm). In the AlN samples, Si dopants act as donors due to substituting Al atoms, and most of C dopants act as acceptors for replacing N atoms. It is also observed that the activation energy of C acceptors in C:Si codoped AlN is reduced by codoping Si donors, which agrees with the computational results.

  Info
Periodical
Advanced Materials Research (Volumes 306-307)
Chapter
Chapter 3: Optical and Electronic Materials
Edited by
Shiquan Liu and Min Zuo
Pages
246-250
DOI
10.4028/www.scientific.net/AMR.306-307.246
Citation
H. L. Wu, R. S. Zheng, W. Zheng, Z. Yan, "Growth of p-Type AlN Crystals by C and Si Codoping", Advanced Materials Research, Vols. 306-307, pp. 246-250, 2011
Online since
August 2011
Export
Price
$32.00
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