Paper Title:
Properties of Al Doped ZnO Thin films by DC Reaction Magnetron Sputtering
  Abstract

The high quality ZAO thin films were successfully produced by DC reaction magnetron sputtering technology. The XRD,electrical and optical properties of films are particular investigated. The results show that ZAO films are polycrystalline hexagonal wurtzite structure,and Al2O3 crystal phase are not found. At the same time,the high quality ZAO films with the minimum resistivity of 4.5x10-4Ω•㎝, the transmittance in visible region above 80% and the reflectivity in IR region above 70% are gained.

  Info
Periodical
Advanced Materials Research (Volumes 306-307)
Chapter
Chapter 3: Optical and Electronic Materials
Edited by
Shiquan Liu and Min Zuo
Pages
362-367
DOI
10.4028/www.scientific.net/AMR.306-307.362
Citation
F. Lu, Y. Sun, C. H. Xu, "Properties of Al Doped ZnO Thin films by DC Reaction Magnetron Sputtering", Advanced Materials Research, Vols. 306-307, pp. 362-367, 2011
Online since
August 2011
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Price
$32.00
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