Paper Title:
Electopolishing of P-Type Silicon Thin Films in Hydrofluoric Acid Solutions
  Abstract

Anodic dissolution on p-type silicon thin film in hydrofluoric acid solutions leads to a reduction of roughness on these surfaces. The electrochemical behavior in different HF concentration is investigated by linear sweep scan, and it is found that the HF has an important role in electrochemical behaviors, and the anodic dissolution rate increases with increasing HF concentration. A smooth surface state can be obtained in HF solutions, and the technique is promising for fabrication of reflecting silicon surfaces.

  Info
Periodical
Advanced Materials Research (Volumes 308-310)
Chapter
Intelligent Optimization Design
Edited by
Jian Gao
Pages
1080-1083
DOI
10.4028/www.scientific.net/AMR.308-310.1080
Citation
F. Hu, Y. W. Chen, X. D. Wang, X. H. Li, "Electopolishing of P-Type Silicon Thin Films in Hydrofluoric Acid Solutions", Advanced Materials Research, Vols. 308-310, pp. 1080-1083, 2011
Online since
August 2011
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Price
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