Paper Title:
Design and Fabrication of Wafer Level Dual-Band Thin Film Bulk Acoustic Resonator Filters
  Abstract

This paper describes the design and fabrication of dual-mode film bulk acoustic resonator (TFBAR) devices to construct wafer level dual-band T-ladder type filters. The T-ladder type filters is selected in this study for its high quality and simple fabrication processes. The c-axis-tilted ZnO thin films to obtain dual-mode TFBAR devices have been investigated. The characteristics of dual-mode TFBAR devices appeared by off-axis deposition of ZnO thin films with the RF magnetron sputtering. The top and bottom electrodes consisted of titanium (Ti) and platinum (Pt) layers are deposited by dual-gun DC sputtering system. The pass-band width of filters is controlled by the mass loading on the dual-mode. The frequency response is measured using an HP8720 network analyzer and a CASCADE probe station.

  Info
Periodical
Advanced Materials Research (Volumes 308-310)
Chapter
Innovative Design Methodology
Edited by
Jian Gao
Pages
201-208
DOI
10.4028/www.scientific.net/AMR.308-310.201
Citation
W. T. Chang, Y. C. Chen, C. C. Cheng, K. S. Kao, R. C. Lin, J. M. Li, "Design and Fabrication of Wafer Level Dual-Band Thin Film Bulk Acoustic Resonator Filters", Advanced Materials Research, Vols. 308-310, pp. 201-208, 2011
Online since
August 2011
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Price
$32.00
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