Paper Title:
Growth of GaN Nano-Column on Si (111) Substrate Using Au+Ga Alloy Seeding by Pulsed Flow Method Using MOCVD
  Abstract

Vertical GaN nano-columns arrays were grown on Au-coated silicon (111) substrate by Au+Ga alloy seeding method and pulsed flow of Gallium and ammonia using metalorganic chemical vapor deposition (MOCVD). A gold thin film was deposited on Si using an ion coating system. The Au coated Si substrate was annealed at 800 oC under hydrogen ambient for 5 min. The pre-deposition of gallium and nitrogen was performed for 60 sec to form Au+Ga and nitrogen solid solution, which acts as the initial nucleation islands. Then Gallium and ammonia were let in pulse method. Scanning electron microscopy (SEM) image reveals a vertical growth and cylindrical in shape GaN nano-column. From the sharp PL peak intensity it is clearly seen that the dislocation density is reduced considerably and the optical quality of the nano-column is improved.

  Info
Periodical
Edited by
S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG
Pages
108-110
DOI
10.4028/www.scientific.net/AMR.31.108
Citation
J. C. Song, D.H. Kang, S. H. Lee, E. S. Jang, D. W. Kim, K. Santhakumar, C. R. Lee, "Growth of GaN Nano-Column on Si (111) Substrate Using Au+Ga Alloy Seeding by Pulsed Flow Method Using MOCVD", Advanced Materials Research, Vol. 31, pp. 108-110, 2008
Online since
November 2007
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