Paper Title:
Nanometer-Scale In0.5Ga0.5As Ring-Like Structure Grown by Droplet Epitaxy
  Abstract

We have demonstrated the fabrication of InGaAs ring-like nanostructures by dropletepitaxy technique using molecular-beam epitaxy. Dependence on the substrate temperature and the amount of indium and gallium of the nanostructural properties was investigated. It was found that increasing substrate temperature resulted in larger InGaAs ring size but with lower density and that increasing In0.5Ga0.5 amount resulted in larger InGaAs ring size but with oscillating density. Photoluminescence results confirmed the high quality of the nanocrystal.

  Info
Periodical
Edited by
S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG
Pages
123-125
DOI
10.4028/www.scientific.net/AMR.31.123
Citation
N. Pankaow, S. Panyakeow, S. Ratanathammaphan, "Nanometer-Scale In0.5Ga0.5As Ring-Like Structure Grown by Droplet Epitaxy", Advanced Materials Research, Vol. 31, pp. 123-125, 2008
Online since
November 2007
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