Paper Title:
In–Mole-Fraction and Thickness of Ultra-Thin InGaAs Insertion Layers Effects on the Structural and Optical Properties of InAs Quantum Dots
  Abstract

InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on different InxGa1-xAs (0 ≤ x ≤ 0.3) to investigate the effect of In-mole-fraction and thickness of InGaAs insertion layer (IL) on the structural and optical properties of the QDs. The density of QDs directly grown on GaAs is 1×1010 cm-2, and increase to 1.4-1.8×1010 cm-2 on InGaAs layers which depend on the In-mole-fraction and thickness of InGaAs layers. The effects of In-mole-fraction and thickness of InGaAs insertion layer on optical properties of the QDs are studied by photoluminescence (PL). The FWHM of PL spectrum corresponds to the size distribution of the QDs.

  Info
Periodical
Edited by
S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG
Pages
132-134
DOI
10.4028/www.scientific.net/AMR.31.132
Citation
P. Boonpeng, S. Panyakeow, S. Ratanathammaphan, "In–Mole-Fraction and Thickness of Ultra-Thin InGaAs Insertion Layers Effects on the Structural and Optical Properties of InAs Quantum Dots", Advanced Materials Research, Vol. 31, pp. 132-134, 2008
Online since
November 2007
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