Paper Title:
Investigation of Electrical Properties in Chalcogenide Thin Film According to Wave Length
  Abstract

Programmable metallization cell (PMC) memory is based on the electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte. We investigate the nature of thin films formed by the photo-dissolution of Ag into Ge-Se-Te glasses for use in programmable metallization cell devices. Glassy alloys of a-Ge25Se75-xTex(x = 0, 25) are prepared by well known melt-quenching technique. Thin films of a-Ge25Se75-xTex(x = 0, 25) glassy alloys are evaporated by vacuum evaporation technique at ~10-6 torr on glass substrate at room temperature. Optical properties in this study concerns photo-diffusion of Ag on Ag-doped Ge-Se-Te electrolytes. With these promising properties, the composition a-Ge25Se75-xTex(x = 0, 25) is recommended as a potential candidate for PMC-RAM.

  Info
Periodical
Edited by
S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG
Pages
135-137
DOI
10.4028/www.scientific.net/AMR.31.135
Citation
H. Choi, H.K. Kim, Y.W. Koo, K.H. Nam, S.M. Koo, W.J. Cho, H.B. Chung, "Investigation of Electrical Properties in Chalcogenide Thin Film According to Wave Length", Advanced Materials Research, Vol. 31, pp. 135-137, 2008
Online since
November 2007
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$32.00
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