Paper Title:
Preparation and Characterization of Zn-Se Bilayer Structure
  Abstract

The Zn-Se bilayer structure prepared using thermal evaporation method at pressure 10-5 Torr. These films annealed in the vacuum for two hours on different constant temperatures. The optical band gap was found to be varying with annealing temperature due to removal of defects and increase in grain size. It was also observed by the X-ray diffraction pattern the grain size of the film increase with annealing temperature. The lattice constant of hexagonal structure of these films is found to be a =b=4.42Å and c=5.68Å. The dominant peaks to be at 23.2°,28° and 43.9° having values (100), (002) and (111) respectively. The Rutherford back scattering data of these films confirmed the mixing of elements with time.

  Info
Periodical
Edited by
S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG
Pages
153-157
DOI
10.4028/www.scientific.net/AMR.31.153
Citation
M. Singh, J.S. Arora, K. Awasthi, R. Nathawat, Y.K. Vijay, "Preparation and Characterization of Zn-Se Bilayer Structure", Advanced Materials Research, Vol. 31, pp. 153-157, 2008
Online since
November 2007
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$32.00
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