Paper Title:
The Formation of InP Ring-Shape Nanostructures on In0.49Ga0.51P Grown by Droplet Epitaxy
  Abstract

We report on the fabrication of self-assembled InP ring-shape nanostructures on In0.49Ga0.51P by droplet molecular-beam epitaxy. The dependency of InP ring-shape nanostructural properties on substrate temperature and indium deposition rate is investigated by ex situ atomic force microscope (AFM). The nano-craters are formed when indium deposition at 120°C while the ring shape quantum-dot molecules are formed when indium deposition at 150°C or higher. The size, density and pattern of InP ring-shape nanostructures strongly depend on substrate temperature and indium deposition rate during indium deposition.

  Info
Periodical
Edited by
S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG
Pages
158-160
DOI
10.4028/www.scientific.net/AMR.31.158
Citation
W. Jewasuwan, S. Panyakeow, S. Ratanathammaphan, "The Formation of InP Ring-Shape Nanostructures on In0.49Ga0.51P Grown by Droplet Epitaxy", Advanced Materials Research, Vol. 31, pp. 158-160, 2008
Online since
November 2007
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