Paper Title:

Morphology and Crystal Quality of InAs QDs Grown by MOVPE Using Different Growth Modes

Periodical Advanced Materials Research (Volume 31)
Main Theme Semiconductor Photonics: Nano-Structured Materials and Devices
Edited by S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG
Pages 17-19
DOI 10.4028/www.scientific.net/AMR.31.17
Citation Zong You Yin et al., 2007, Advanced Materials Research, 31, 17
Online since November, 2007
Authors Zong You Yin, Xiao Hong Tang, Ji Xuan Zhang, Deny Sentosa, Jing Hua Teng, An Yan Du, Mee Koy Chin
Keywords Crystal Quality, Growth Mode, Morphology, MOVPE, Quantum Dots
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Abstract

Morphology and crystal-quality of InAs/In0.53Ga0.47As/InP quantum dots (QDs) grown by metal-organic vapor phase epitaxy (MOVPE) in N2 ambient using different growth modes have been studied. It is found that the morphology and crystal-quality of InAs QDs are dependant on the growth modes. After optimizing the dots’ growth modes, dots’ size dispersion and crystal-quality are both improved greatly, resulting in the enhancement factor of ∼ 2.9 in the photoluminescence (PL) peak-intensity from single QD. When the dots are buried, the dot size decrease compared with the free-standing dots due to the soon capping layer deposition during dots’ being buried. The thermal activation energy measured is comparable to the valence-band offset in the QD system calculated by 8 kp theory model. This indicates the PL quenching induced by the interface defects is suppressed due to the defect density lowering in the QDs grown by such optimized growth mode.