Morphology and Crystal Quality of InAs QDs Grown by MOVPE Using Different Growth Modes
| Periodical | Advanced Materials Research (Volume 31) |
|---|---|
| Main Theme | Semiconductor Photonics: Nano-Structured Materials and Devices |
| Edited by | S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG |
| Pages | 17-19 |
| DOI | 10.4028/www.scientific.net/AMR.31.17 |
| Citation | Zong You Yin et al., 2007, Advanced Materials Research, 31, 17 |
| Online since | November, 2007 |
| Authors | Zong You Yin, Xiao Hong Tang, Ji Xuan Zhang, Deny Sentosa, Jing Hua Teng, An Yan Du, Mee Koy Chin |
| Keywords | Crystal Quality, Growth Mode, Morphology, MOVPE, Quantum Dots |
| Price | US$ 28,- |
Morphology and crystal-quality of InAs/In0.53Ga0.47As/InP quantum dots (QDs) grown by metal-organic vapor phase epitaxy (MOVPE) in N2 ambient using different growth modes have been studied. It is found that the morphology and crystal-quality of InAs QDs are dependant on the growth modes. After optimizing the dots’ growth modes, dots’ size dispersion and crystal-quality are both improved greatly, resulting in the enhancement factor of ∼ 2.9 in the photoluminescence (PL) peak-intensity from single QD. When the dots are buried, the dot size decrease compared with the free-standing dots due to the soon capping layer deposition during dots’ being buried. The thermal activation energy measured is comparable to the valence-band offset in the QD system calculated by 8 kp theory model. This indicates the PL quenching induced by the interface defects is suppressed due to the defect density lowering in the QDs grown by such optimized growth mode.