Paper Title:
Surface and Structure of Porous Silicon Layers
  Abstract

The porous silicon (PS) layers were fabricated on n(100) and n(111) silicon by applying the constant and repeated currents in different HF solutions. The electrochemical impedance spectroscopy (EIS) was used to in-situ characterize the Si/electrolyte interface before and after the PS formations. The surface and structure of PS layers were examined in terms of electrochemical/surface parameters.

  Info
Periodical
Edited by
S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG
Pages
170-172
DOI
10.4028/www.scientific.net/AMR.31.170
Citation
J. M. Lu, X. Cheng, "Surface and Structure of Porous Silicon Layers", Advanced Materials Research, Vol. 31, pp. 170-172, 2008
Online since
November 2007
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$32.00
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