Paper Title:
Broadband Emission in InAs/InGaAlAs Quantum-Dash-in-Well Laser
  Abstract

We report on the development of wide gain InAs/InGaAlAs/InP quantum-dash structure for broadband diode laser and amplifier. Characterizations of this material system have been performed using spectroscopy and microscopy techniques. Gain-guided broad area laser fabricated using this material system exhibits lasing wavelength coverage of up to 76 nm at ~1.64 (m center wavelength from simultaneous multiple confined states lasing at room temperature.

  Info
Periodical
Edited by
S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG
Pages
173-175
DOI
10.4028/www.scientific.net/AMR.31.173
Citation
B. S. Ooi, H. S. Djie, A.S. Helmy, J. C.M. Hwang, "Broadband Emission in InAs/InGaAlAs Quantum-Dash-in-Well Laser", Advanced Materials Research, Vol. 31, pp. 173-175, 2008
Online since
November 2007
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