Paper Title:
Population Dynamics of Excitons in Silicon Nanocrystals Structures under Strong Optical Excitation
  Abstract

We report on the experimental and theoretical studies of population/depopulation dynamics of excitons in the structures with Si nanocrystals in SiO2 matrix (nc-Si/SiO2) under strong optical excitation. The experimental results are explained using a phenomenological model based on rate equations for coupled system of energy donors (excitons) and energy acceptors (erbium ions). Exciton luminescence is found to exhibit superlinear dependence for Er-doped samples. At the same time the Er-related luminescence at 1.5 μm shows a saturation of the intensity and shortening of the lifetime, which are attributed to the population inversion of the Er ions states. The obtained results demonstrate that nc-Si/SiO2:Er systems can be used for applications in Si-based optical amplifiers and lasers, compatible with planar Si-technology.

  Info
Periodical
Edited by
S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG
Pages
196-198
DOI
10.4028/www.scientific.net/AMR.31.196
Citation
O. A. Shalygina, D. M. Zhigunov, D. A. Palenov, V. Timoshenko, P. K. Kashkarov, M. Zacharias, P. M. Koenraad, "Population Dynamics of Excitons in Silicon Nanocrystals Structures under Strong Optical Excitation", Advanced Materials Research, Vol. 31, pp. 196-198, 2008
Online since
November 2007
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