Paper Title:
InGaAsP/InP Electroabsorption Modulator with Single-Sided Large Optical Cavity by Low-Pressure MOCVD
  Abstract

An InGaAsP/InP Electroabsorption Modulator (EAM) with single-sided large optical cavity (LOC) was studied and fabricated by low-pressure Metal Organic Chemical Vapor Deposition (MOCVD). Results show that the optical profile of EAM is greatly improved by the LOC structure, which is expected to increase the coupling efficiency and the optical saturation power.

  Info
Periodical
Edited by
S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG
Pages
246-248
DOI
10.4028/www.scientific.net/AMR.31.246
Citation
H. Yang, M.K. Chin, D. C.S. Lim, S.Y. Lee, C.W. Lee, H.L. Zhu, "InGaAsP/InP Electroabsorption Modulator with Single-Sided Large Optical Cavity by Low-Pressure MOCVD", Advanced Materials Research, Vol. 31, pp. 246-248, 2008
Online since
November 2007
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