Paper Title:
Novel Passivation Method in the Fabrication of Submicron InGaAsP/InP Ridge Waveguide Lasers
  Abstract

One challenge for the realization of electrically drive nano-photonic devices is the formation of metal contacts and passivation. In this paper, we report a novel self-aligned method suitable for the formation of the metal contact and passivation for submicron photonic devices. Two different dielectric materials with high selectivity in wet chemical etching and a wet etching of semiconductor to create an undercut are involved. The whole process is completely compatible with existing compound semiconductor process. As a demonstration of this method, the fabrication and characterization of an InGaAsP/InP submicron-ridge waveguide lasers is presented. The method is extendable to high aspect ratio-submicron ridge waveguide and other device fabrication.

  Info
Periodical
Edited by
S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG
Pages
30-32
DOI
10.4028/www.scientific.net/AMR.31.30
Citation
E. L. Lim, J. H. Teng, S. J. Chua, J.R. Dong, N. S. S. Ang, L. F. Chong, "Novel Passivation Method in the Fabrication of Submicron InGaAsP/InP Ridge Waveguide Lasers", Advanced Materials Research, Vol. 31, pp. 30-32, 2008
Online since
November 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: K. Dynefors, V. Desmaris, Joakim Eriksson, Per Åke Nilsson, Niklas Rorsman, Herbert Zirath
1125
Authors: Hidenori Koketsu, Tomoaki Hatayama, Kento Amishima, Hiroshi Yano, Takashi Fuyuki
Abstract:The sloped sidewall angle in 4H-SiC mesa structure could be controlled by a thermal etching at 900oC in chlorine (Cl2) based ambience. 4H-SiC...
485
Authors: J.H. Choi, Laurence Latu-Romain, Thierry Baron, Thierry Chevolleau, Edwige Bano
Chapter 5: Processing of SiC
Abstract:We demonstrate a top-down fabrication technique for nanometer scale silicon carbide (SiC) pillars by using inductively coupled SF6/O2 plasma...
893