Paper Title:
Sputtered SiO2 Induced Atomic Interdiffusion in Semiconductor Nano Heterostructures
  Abstract

We investigate the influence of sputtered silica as annealing cap on the enhancement of intermixing rate of semiconductor quantum nanostructures. After sputtered silica application and subsequent rapid thermal annealing, we observed bandgap shift of over 200 meV with respect to the bandgap of as-grown material from various GaAs-based quantum well (QW) heterostructures such as GaAs/AlGaAs, InAlGaP/GaAs, and GaAs/AlGaAs systems at significantly lower temperature than the conventional dielectric cap process with plasma enhanced chemical vapor deposition (PECVD). The results suggest that the sputtered silica process is a promising intermixing technique for the monolithic integration of multiple active/passive photonic components on GaAs-based material systems.

  Info
Periodical
Edited by
S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG
Pages
33-35
DOI
10.4028/www.scientific.net/AMR.31.33
Citation
V. Hongpinyo, Y.H. Ding, J. Anderson, H. S. Djie, B. S. Ooi, R.R. Du, A. Ganjoo, H. Jain, "Sputtered SiO2 Induced Atomic Interdiffusion in Semiconductor Nano Heterostructures", Advanced Materials Research, Vol. 31, pp. 33-35, 2008
Online since
November 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Eui Tae Kim, Anupam Madhukar
Abstract:We discuss the growth kinetics of InAs/GaAs self-assembled quantum dots (QDs) using two different InAs deposition rates, relatively fast...
539
Authors: Ivan V. Ilyin, Marina V. Muzafarova, P.G. Baranov, B.Ya. Ber, A.N. Ionov, E.N. Mokhov, Pavel A. Ivanov, M.A. Kaliteevskii, P.S. Kop'ev
Abstract:High concentration of two types of P donors up to 1017 cm-3 in SiC enriched with 30Si after neutron transmutation doping (NTD) has been...
599
Authors: Zhan Guo Li, Ming Hui You, Guo Jun Liu, Xin Gao, Lin Li, Zhi Peng Wei, Mei Li, Yong Wang, Xiao Hua Wang, Lian He Li
Chapter 1: Multifunctional Materials
Abstract:We investigate the growth of low-density(~4×108cm-2) InAs quantum dots (QDs) on GaAs by molecular beam...
12
Authors: N. Chuchvaga, E. Bogdanova, A. Strelchuk, Evgenia V. Kalinina, D.B. Shustov, M. Zamoryanskaya, V. Shkuratov
Chapter 7: Electrical and Structural Characterization
Abstract:A comparative research of the cathodoluminescence and electrical characteristics of the samples 4H-SiC irradiated with high energy Xe ions...
625