Charge Effect in Organic Field-Effect Transistors - Analyzing Hall Measurements in the Accumulation Layer |
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| Journal | Advanced Materials Research (Volume 31) |
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| Volume | Semiconductor Photonics: Nano-Structured Materials and Devices |
| Edited by | S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG |
| Pages | 4-6 |
| DOI | 10.4028/www.scientific.net/AMR.31.4 |
| Citation | Harry L. Kwok, 2007, Advanced Materials Research, 31, 4 |
| Online since | November, 2007 |
| Authors | Harry L. Kwok |
| Keywords | Conductivity Measurements, Hall Measurements, Hopping, Mean Free Distance, Trap States |
| Abstract | Hall measurement is an effective means to measure carrier density and mobility in metals and semiconductors. This work examined the carrier mobility determined in the accumulation layer of organic field-effect transistors (OFETS) and proposed a method to explain data taken from rubrene single-crystal devices. The model was used to extract information on the trap states and the properties of the transport layer at different temperature. |
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