Paper Title:

Charge Effect in Organic Field-Effect Transistors - Analyzing Hall Measurements in the Accumulation Layer

Periodical Advanced Materials Research (Volume 31)
Main Theme Semiconductor Photonics: Nano-Structured Materials and Devices
Edited by S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG
Pages 4-6
DOI 10.4028/www.scientific.net/AMR.31.4
Citation Harry L. Kwok, 2007, Advanced Materials Research, 31, 4
Online since November, 2007
Authors Harry L. Kwok
Keywords Conductivity Measurements, Hall Measurements, Hopping, Mean Free Distance, Trap States
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Abstract

Hall measurement is an effective means to measure carrier density and mobility in metals and semiconductors. This work examined the carrier mobility determined in the accumulation layer of organic field-effect transistors (OFETS) and proposed a method to explain data taken from rubrene single-crystal devices. The model was used to extract information on the trap states and the properties of the transport layer at different temperature.