Paper Title:
Charge Effect in Organic Field-Effect Transistors - Analyzing Hall Measurements in the Accumulation Layer
  Abstract

Hall measurement is an effective means to measure carrier density and mobility in metals and semiconductors. This work examined the carrier mobility determined in the accumulation layer of organic field-effect transistors (OFETS) and proposed a method to explain data taken from rubrene single-crystal devices. The model was used to extract information on the trap states and the properties of the transport layer at different temperature.

  Info
Periodical
Edited by
S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG
Pages
4-6
DOI
10.4028/www.scientific.net/AMR.31.4
Citation
H. L. Kwok, "Charge Effect in Organic Field-Effect Transistors - Analyzing Hall Measurements in the Accumulation Layer ", Advanced Materials Research, Vol. 31, pp. 4-6, 2008
Online since
November 2007
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