Paper Title:
Characteristics of Ge Nanocrystals Grown by RF Magnetron Sputtering
  Abstract

We report the self-assembled growth of Ge islands of different shapes and sizes on p-Si (001) by r.f. magnetron sputtering by varying the r.f. power, growth temperature and postdeposition annealing condition. The well known Stranski-Krastanov growth mechanism due to lattice mismatch between Si & Ge leads to the formation of Ge islands, similar to a more sophisticated MBE growth, albeit at a much higher pressure in our study. Ge nanocrystals embedded in SiO2 matrix have also been grown. Optical properties of nanocrystals exhibiting visible luminescence at room temperature are presented.

  Info
Periodical
Edited by
S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG
Pages
89-91
DOI
10.4028/www.scientific.net/AMR.31.89
Citation
R.K. Singha, K. Das, S. Das, A. Dhar, S.K. Ray, "Characteristics of Ge Nanocrystals Grown by RF Magnetron Sputtering", Advanced Materials Research, Vol. 31, pp. 89-91, 2008
Online since
November 2007
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