Paper Title:
Studying the Structure and Semiconductor Properties of Passive Film on 316SS by XPS and Capacitance Measurement
  Abstract

In borate buffer solution, anodic oxide passive film was formed on 316SS at 0.6 VSCE. Chemical composition and semiconductor properties of the film were studied by XPS and capacitance measurement. It’s determined from the results that the film has duplex structure with inner oxide layer and outer hydroxide layer. The inner layer behaves as p-type semiconductor, while the outer layer shows n-type semiconductor. A p-n junction is formed at the interface of outer and inner layer, and it plays an important role in the protective effect on the metal matrix.

  Info
Periodical
Advanced Materials Research (Volumes 311-313)
Chapter
Steel and Iron
Edited by
Zhongning Guo
Pages
1021-1026
DOI
10.4028/www.scientific.net/AMR.311-313.1021
Citation
F. Yang, G. X. Yang, "Studying the Structure and Semiconductor Properties of Passive Film on 316SS by XPS and Capacitance Measurement", Advanced Materials Research, Vols. 311-313, pp. 1021-1026, 2011
Online since
August 2011
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Price
$32.00
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