Paper Title:
Properties of CdMnTe Single Crystal Used in Nuclear Radiation Detectors
  Abstract

The Cd1-xMnxTe crystal is believed to be a good candidate to compete with Cd1-xMnxTe in the X-ray and γ-ray detector application. In this paper, Indium (In) doped Cd0.8Mn0.2Te (CdMnTe) ingots were grown by the modified Vertical Bridgman method. The as-grown crystals were characterized using Near-Infrared (NIR) transmission spectrum mapping of composition, X-ray double-crystal rocking curve measurement, I-V measurement and 241Am gamma rays radiation measurement. The Mn composition extracted from the NIR spectra at different axial and radial distances of the 30×40×2 mm3 CdMnTe wafers shown that the Mn concentration in the range of 0.19430.0008 to 0.2020.0025 mole fraction. The FWHM values of the X-ray rocking curves are of 40-80 arc sec, indicating a high crystalline perfection. The resistivity of the wafers is (2-3) ×1010Ω.cm. The CdMnTe planar detector irradiated by 241Am source shows the energy resolution of 8.5%.

  Info
Periodical
Advanced Materials Research (Volumes 311-313)
Chapter
Optical/Electronic/Magnetic Materials
Edited by
Zhongning Guo
Pages
1209-1212
DOI
10.4028/www.scientific.net/AMR.311-313.1209
Citation
J. J. Zhang, L. J. Wang, J. Huang, K. Tang, Z. W. Yuan, Y. B. Xia, "Properties of CdMnTe Single Crystal Used in Nuclear Radiation Detectors", Advanced Materials Research, Vols. 311-313, pp. 1209-1212, 2011
Online since
August 2011
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$32.00
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