Paper Title:
Effect of Seed Layers Prepared by Vertical Deposition Method on the Growth and Properties of Oriented Polycrystalline α-HgI2 Films
  Abstract

Polycrystalline α-HgI2 films have been grown through combining vertical deposition method with hot wall vapor phase deposition (HWPVD) method. The influence of the α-HgI2 seed layers on the structural and electrical properties of the polycrystalline α-HgI2 films was investigated. It is found that the α-HgI2 seed layers play an important role in reducing the grain sizes, increasing the density improving the crystallographic orientation and electrical properties of the polycrystalline α-HgI2 films.

  Info
Periodical
Advanced Materials Research (Volumes 311-313)
Chapter
Optical/Electronic/Magnetic Materials
Edited by
Zhongning Guo
Pages
1237-1241
DOI
10.4028/www.scientific.net/AMR.311-313.1237
Citation
L. Ma, W. G. Yang, Y. L. Wang, G. L. Liu, K. Tang, L. J. Wang, W. M. Shi, "Effect of Seed Layers Prepared by Vertical Deposition Method on the Growth and Properties of Oriented Polycrystalline α-HgI2 Films", Advanced Materials Research, Vols. 311-313, pp. 1237-1241, 2011
Online since
August 2011
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Price
$32.00
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