Paper Title:
Research on Annealing Temperature of SiO2 on Si Substrate
  Abstract

Silicon dioxide films; radio-frequency magnetron sputtering; annealing temperature Abstract. Silicon dioxide (SiO2) films are fabricated on single crystal silicon substrate by radio-frequency magnetron sputtering (RFMS) technique and annealed in electric furnaces at 800°C and 1180°C to form uniform, transparent and compact silica. The surface morphology and roughness of the films are characterized by an atomic force microscopy (AFM). X-ray diffraction (XRD) is employed to analyze the crystalline of the thin films. The chemical composition after annealing is analyzed using X-ray photoelectron spectroscopy (XPS).

  Info
Periodical
Advanced Materials Research (Volumes 311-313)
Chapter
Optical/Electronic/Magnetic Materials
Edited by
Zhongning Guo
Pages
1258-1261
DOI
10.4028/www.scientific.net/AMR.311-313.1258
Citation
H. Lv, Y. M. Ding, A. M. Liu, J. F. Tong, X. N. Yi, Q. G. Li, C. Chen, B. R. Shi, "Research on Annealing Temperature of SiO2 on Si Substrate", Advanced Materials Research, Vols. 311-313, pp. 1258-1261, 2011
Online since
August 2011
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$32.00
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