Paper Title:
Preparation and Properties of N-ZnS Film/P-Si Heterojunction
  Abstract

ZnS films were prepared on silicon (Si) and glass substrates by radio-frequency (RF) magnetron sputtering method. The effect of annealing treatment on the structural and optical properties of ZnS films was studied. The results showed that annealing treatment was helpful in improving the crystalline quality of the ZnS films, and the bandgap was about 3.61eV and 3.49eV for films with and without annealing, respectively. A ZnS/ Si heterojunction diode was fabricated successfully by depositing ZnS films on p-type single-crystalline Si substrates. The electrical and optical property of the device was reported.

  Info
Periodical
Advanced Materials Research (Volumes 311-313)
Chapter
Optical/Electronic/Magnetic Materials
Edited by
Zhongning Guo
Pages
1277-1280
DOI
10.4028/www.scientific.net/AMR.311-313.1277
Citation
J. Huang, L. J. Wang, K. Tang, J. J. Zhang, R. Xu, Y. B. Xia, X. G. Lu, "Preparation and Properties of N-ZnS Film/P-Si Heterojunction", Advanced Materials Research, Vols. 311-313, pp. 1277-1280, 2011
Online since
August 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Jian Sheng Xie, Ping Luan, Jin Hua Li
Chapter 9: Composite Materials II
Abstract:Using magnetron sputtering technology, the CuInSi nanocomposite thin films were prepared by multilayer synthesized method. The structure of...
2770
Authors: Kittipong Tantisantisom, Kanpitcha Jiramitmonkon, Thanakorn Jiemsakul, Thanawee Chodjarusawad, Udom Asawapirom
Chapter 4: Nanosensors
Abstract:In this work, the ultraviolet (UV) sensors based on heterojunction between layer of zinc oxide nanoparticles (ZnO NPs) and poly...
157