Paper Title:
Si3N4 Double Passivation Methods for Optimizing the DC Properties in a Gamma-Gate AlGaN/GaN HEMT Using Plasma Enhanced Chemical Vapor Deposition
  Abstract

Double passivation layers, Si3N4 on Si3N4 (Si3N4 / Si3N4), have been implemented onto the top and bottom surface passivation film layers for a gamma-gate AlGaN/GaN HEMT using Plasma Enhanced Chemical Vapor Deposition (PECVD). The effects of the reduced current collapse electro characteristics were then compared to devices using double passivation as SiO2 on SiO2 (SiO2 / SiO2). Both samples were tested under the same conditions: Vds = 0 to 15 V and Vgs = 1 to -5 V. The Si3N4 / Si3N4 passivation results show a maximum saturation current density (Ids max) of 761 mA/mm, a peak extrinsic trans conductance (gm max) of 200 mS/mm, and threshold voltages of (Vth) -4.5 V, which increases up to 18% and 5% than those of SiO2/SiO2 double passivation.

  Info
Periodical
Advanced Materials Research (Volumes 311-313)
Chapter
Thin Films
Edited by
Zhongning Guo
Pages
1793-1797
DOI
10.4028/www.scientific.net/AMR.311-313.1793
Citation
S. J. Cho, C. Wang, W. S. Lee, N. Y. Kim, "Si3N4 Double Passivation Methods for Optimizing the DC Properties in a Gamma-Gate AlGaN/GaN HEMT Using Plasma Enhanced Chemical Vapor Deposition", Advanced Materials Research, Vols. 311-313, pp. 1793-1797, 2011
Online since
August 2011
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Price
$32.00
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