Paper Title:
Surface Channel Hot-Carrier Effect on CLC n-TFTs
  Abstract

The deterioration of continuous-wave green laser-crystallized (CLC) single-grainlike polycrystalline silicon n-channel thin-film transistors (poly-Si n-TFTs) under surface channel hot-carrier (CHC) stress (VDS=16 V and VGS=16 V labeled as a CHC-1 stress) was studied. The electrical properties of trap states containing interface trap states of gate oxide and poly-Si channel and grain boundary trap states were characterized by capacitance-voltage (C-V) measurement. In addition, while a higher stress voltage, CHC-2 stress at VDS=18 V and VGS=18 V, was adopted, the increase of interface trapped charges was obviously observed.

  Info
Periodical
Advanced Materials Research (Volumes 314-316)
Chapter
Laser Processing Technology
Edited by
Jian Gao
Pages
1881-1884
DOI
10.4028/www.scientific.net/AMR.314-316.1881
Citation
M. C. Wang, H. C. Yang, "Surface Channel Hot-Carrier Effect on CLC n-TFTs", Advanced Materials Research, Vols. 314-316, pp. 1881-1884, 2011
Online since
August 2011
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Price
$32.00
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