Paper Title:
Single Femtosecond Laser Pulse Irradiation of Silicon on Different Crystallographic Facet Planes
  Abstract

Experiment on ablation of silicon wafer on different crystallographic facet planes by single laser pulse irradiation was carried out with a femtosecond pulsed laser operating at a wavelength of 780 nm and a pulse width of 160 fs. The quality and morphology of the laser ablated silicon surface were evaluated by atomic force microscopy. The ablation threshold fluences on different crystallographic facet planes were obtained through the relationship between the squared diameter of the craters and pulse energy. The effects of different crystallographic facet planes of silicon wafer on the process of femtosecond laser ablation of silicon wafer were studied.

  Info
Periodical
Advanced Materials Research (Volumes 314-316)
Chapter
Laser Processing Technology
Edited by
Jian Gao
Pages
1885-1888
DOI
10.4028/www.scientific.net/AMR.314-316.1885
Citation
L. T. Qi, "Single Femtosecond Laser Pulse Irradiation of Silicon on Different Crystallographic Facet Planes", Advanced Materials Research, Vols. 314-316, pp. 1885-1888, 2011
Online since
August 2011
Authors
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Price
$32.00
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