Paper Title:
Probing Drain Current with Vertical and Horizontal Electrical Fields under Temperature Stress on CLC TFTs
  Abstract

Thin-film transistors (TFT) usually exhibit non-uniform electrical characteristics fabricated by the identical process because of the formation of the grain boundary traps, bulk grain traps, interface states and some defects on channel region. All the traps and defects affecting the electrical characteristics of TFTs can be thermally and electrically activated. In this study, the temperature effect accompanying the horizontal and vertical electric fields stressing on continuous-wave green laser-crystallized (CLC) single-grain-like poly silicon TFTs (poly-Si TFTs), presenting the excellent effective electron mobility, up to 530 cm^2/V-s, was firstly investigated.

  Info
Periodical
Advanced Materials Research (Volumes 314-316)
Chapter
Laser Processing Technology
Edited by
Jian Gao
Pages
1922-1925
DOI
10.4028/www.scientific.net/AMR.314-316.1922
Citation
M. C. Wang, H. C. Yang, "Probing Drain Current with Vertical and Horizontal Electrical Fields under Temperature Stress on CLC TFTs", Advanced Materials Research, Vols. 314-316, pp. 1922-1925, 2011
Online since
August 2011
Export
Price
$32.00
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