Paper Title:
Surface-Channel Drain-Avalanche Hot-Carrier Effect under Temperature Variation on CLC TFTs
  Abstract

Continuous-wave green laser-crystallized (CLC) single-grainlike polycrystalline silicon n-channel thin-film transistors (poly-Si n-TFTs) exhibit the higher electron mobility and turn-on current than excimer laser annealing (ELA) poly-Si n-TFTs. Furthermore, high drain voltage accelerates the flowing electrons in n-type channel, and hence the energized electrons possibly cause a serious damage near the drain region and deteriorate the source/drain (S/D) current. Using this good reliability metrology to verify the quality of CLC n-TFTs was adopted. The degradation mechanisms of S/D current for CLC poly-Si n-TFTs were firstly investigated by measuring the gate-to-drain overlap capacitor, and with the drain-avalanche hot-carrier stresses at 2VGS = VDS =14 V and 2VGS =VDS =18 V in temperature environment, 25 oC and 50 oC.

  Info
Periodical
Advanced Materials Research (Volumes 314-316)
Chapter
Laser Processing Technology
Edited by
Jian Gao
Pages
1926-1929
DOI
10.4028/www.scientific.net/AMR.314-316.1926
Citation
M. C. Wang, H. C. Yang, "Surface-Channel Drain-Avalanche Hot-Carrier Effect under Temperature Variation on CLC TFTs", Advanced Materials Research, Vols. 314-316, pp. 1926-1929, 2011
Online since
August 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Mu Chun Wang, Hsin Chia Yang
Laser Processing Technology
Abstract:The deterioration of continuous-wave green laser-crystallized (CLC) single-grainlike polycrystalline silicon n-channel thin-film transistors...
1881
Authors: Mu Chun Wang, Hsin Chia Yang
Laser Processing Technology
Abstract:The positive-bias temperature instability (PBTI) test is one of effective reliability evaluation tests in negative-channel...
1918
Authors: Mu Chun Wang, Hsin Chia Yang
Laser Processing Technology
Abstract:Thin-film transistors (TFT) usually exhibit non-uniform electrical characteristics fabricated by the identical process because of the...
1922