Paper Title:
Finite Element Analysis on Structural Stress of 16×16 InSb IRFPA with Viscoelastic Underfill
  Abstract

The thermal stress and strain, from the thermal mismatch of neighboring materials, are the major causes of fracture in InSb IRFPA. Basing on viscoelastic model describing underfill, the structural stress of 16×16 InSb IRFPA under thermal shock is studied with finite element method. Simulation results show that as the diameters of indium bump increase from 20μm to 36μm in step of 2μm, the maximum stress existing in InSb chip first increases slightly, and fluctuates near 28µm, then decreases gradually. Furthermore, the varied tendency seems to have nothing to do with indium bump standoff height, and with thicker indium bump height, the maximal Von Mises stress in InSb chip is smaller. All these mean that the thicker underfill is in favor of reducing the stress in InSb chip and improving the final yield.

  Info
Periodical
Advanced Materials Research (Volumes 314-316)
Chapter
Modeling, Analysis and Simulation of Manufacturing Processes
Edited by
Jian Gao
Pages
530-534
DOI
10.4028/www.scientific.net/AMR.314-316.530
Citation
L. W. Zhang, J. C. Wang, Q. Yu, Q. D. Meng, "Finite Element Analysis on Structural Stress of 16×16 InSb IRFPA with Viscoelastic Underfill", Advanced Materials Research, Vols. 314-316, pp. 530-534, 2011
Online since
August 2011
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$32.00
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