Paper Title:
An Analytic Model for Electron Mobility in Strained Si/Si1-xGex nMOSFETs
  Abstract

In order to describe electron transport properties in inversion layer of strained Si/Si1-xGex nMOSFETs, a new analytic electron mobility model is proposed. The model not only takes into account the effect of germanium(Ge) content on phonon scattering-limited mobility and surface roughness-limited mobility, and but also includes the degradation effect of strained Si film thickness and temperature on the device mobility. For various Ge content and a wide range of normal electric field, temperature and strained Si film thickness, the model provides good agreement with the experimental data in references. In addition, the model can be expressed using the analytical expression and can be easily included in the device simulator.

  Info
Periodical
Advanced Materials Research (Volumes 317-319)
Chapter
Microelectronic Technology
Edited by
Xin Chen
Pages
1168-1171
DOI
10.4028/www.scientific.net/AMR.317-319.1168
Citation
B. Li, H. X. Liu, J. Li, "An Analytic Model for Electron Mobility in Strained Si/Si1-xGex nMOSFETs", Advanced Materials Research, Vols. 317-319, pp. 1168-1171, 2011
Online since
August 2011
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Price
$32.00
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