Paper Title:
Impact of Ge-Profile in Base on SiGe pnp HBT’s Performance
  Abstract

SiGe heterojunction structure much improves the performance of PnP HBT (heterojunction bipolar transistor), which focus on the impact of Ge component distribution in the base on the current gain and characteristic frequency . The triangular distribution in the base, including zero-doping and non-zero-doping at the starting point, will form a Ge-gradient acceleration filed for the minority carriers in the base to reduce the base transport time and increase current density and working frequency. Extend Ge to the collector region to eliminate the effect of the valence band spike barrier at the collector junction, further improving the performance of the pnp HBT. By the simulations and optimizations in this paper, the and of pnp SiGe HBT improves evidently, and the results can be referenced in the design of SiGe devices and circuits.

  Info
Periodical
Advanced Materials Research (Volumes 317-319)
Chapter
Microelectronic Technology
Edited by
Xin Chen
Pages
1183-1186
DOI
10.4028/www.scientific.net/AMR.317-319.1183
Citation
L. Li, H. X. Liu, "Impact of Ge-Profile in Base on SiGe pnp HBT’s Performance", Advanced Materials Research, Vols. 317-319, pp. 1183-1186, 2011
Online since
August 2011
Authors
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Price
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