Paper Title:
Analysis of the Main Parameters in the Chemical Mechanical Polishing Process
  Abstract

This paper studies the chemical mechanical polishing (CMP) of the wafer's material such as stainless steel, monocrystalline silicon etc, and analyzes how the technological parameters’ impact on the final wafer’s surface material removal rate, surface quality and surface damage like the polishing pad’s speed and the wafer speed, polishing pressure and polishing time.The results show that: when the difference between the polishing pad's rotation speed and the wafer's rotation speed is small and their directions are the same , then the material removal rate of the wafer is larger.when the polishing pressure is selected between 5 to 6.5 kPa, the wafer surface's damage is smaller.The polishing time also play a very important role and affect the surface quality and surface damage of the wafer after polishing.

  Info
Periodical
Advanced Materials Research (Volumes 317-319)
Chapter
Materials and Its Applications
Edited by
Xin Chen
Pages
29-33
DOI
10.4028/www.scientific.net/AMR.317-319.29
Citation
X. D. Yang, X. Wei, X. Z. Xie, Z. Chen, W. B. Zou, "Analysis of the Main Parameters in the Chemical Mechanical Polishing Process", Advanced Materials Research, Vols. 317-319, pp. 29-33, 2011
Online since
August 2011
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Price
$32.00
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