Paper Title:
Molecular Dynamics Simulation of Ni/Cu Epitaxial Thin Film Growth
  Abstract

In this paper, the growth process of Ni deposited on the Cu() surface at 300K and 700K was simulated by molecular dynamics. The impact of the substrate temperature on the growth pattern and structure of thin film was investigated. The simulation results show that, at the higher substrate temperature, the surface of thin film is smoother and the growth pattern of thin film is two-dimensional layer, however, at the lower temperature, the growth mode of thin film is three-dimensional island.

  Info
Periodical
Chapter
Chapter 1: Key Engineering Materials
Edited by
Jun Hu and Qi Luo
Pages
373-376
DOI
10.4028/www.scientific.net/AMR.320.373
Citation
Z. Q. Liu, J. Li, N. G. Zhou, J. N. Wei, "Molecular Dynamics Simulation of Ni/Cu Epitaxial Thin Film Growth", Advanced Materials Research, Vol. 320, pp. 373-376, 2011
Online since
August 2011
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