Paper Title:
VOC Gas Sensing Based on the BJT Mode of Gated LBJT Device
  Abstract

Volatile organic compounds (VOCs) gas sensor based on gated lateral bipolar junction transistor (LBJT) was developed in this study. The device was fabricated using 0.35-μm logic process by Magnachip-Hynix Co. Ltd. under the Integrated Circuit Design education Center Multi Project Wafer (IDEC-MPW) program. Solvatochromic dye as the sensing membrane was coated on the floating gate of the device. A semiconductor test and analyzer (STA-EL421, ELECS) was used to measure the sensing results. Following the results, we found that the sensing device which used the gated LBJT device has fast responsibility and reversibility to VOC gases (acetone etc.).

  Info
Periodical
Chapter
Chapter 2: Mechanical Engineering, Control Engineering and Materials Engineering
Edited by
Jun Hu and Qi Luo
Pages
597-600
DOI
10.4028/www.scientific.net/AMR.320.597
Citation
H. Yuan, B. Wang, S. H. Yeom, K. J. Kim, D. H. Kwon, S. W. Kang, "VOC Gas Sensing Based on the BJT Mode of Gated LBJT Device", Advanced Materials Research, Vol. 320, pp. 597-600, 2011
Online since
August 2011
Export
Price
$32.00
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