Paper Title:
TEM Investigation of Horizontal-Grown Silicon Nanowires
  Abstract

Horizontal silicon nanowires were grown using thermal annealing of thin layers of aluminum on silicon substrates. The template to grow these wires was the thin aluminum layer. As the samples reached the eutectic temperature during annealing, silicon dissolved rapidly in the aluminum layer and deposited at the grain boundary in a form of silicon nanowires. Cross sectional TEM analysis indicated the crystalline structure of these wires.

  Info
Periodical
Chapter
Chapter II: Characterizations Techniques and Properties
Edited by
Maher Soueidan, Mohamad Roumié and Pierre Masri
Pages
201-204
DOI
10.4028/www.scientific.net/AMR.324.201
Citation
H. Abu-Safe, "TEM Investigation of Horizontal-Grown Silicon Nanowires", Advanced Materials Research, Vol. 324, pp. 201-204, 2011
Online since
August 2011
Authors
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Price
$32.00
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