Paper Title:
Characterization of Nitrided Gate Oxide Formed by RTP for SiC MOSFET Application
  Abstract

Gate oxides for SiC lateral MOSFETs have been formed in N2O by rapid thermal processing (RTP) as an alternative to the conventional furnace process. This innovative oxidation method has not only the advantage to significantly reduce the thermal budget compared to a standard oxidation, but also to produce oxide layers with quality comparable to the one grown in a conventional furnace. Moreover, a significant improvement of the oxide quality and MOSFET performance is observed when performing in-situ a H2 anneal prior to oxidation as surface pretreatment. The channel mobility and the breakdown field of the gate oxide are considerably increased.

  Info
Periodical
Chapter
Chapter II: Characterizations Techniques and Properties
Edited by
Maher Soueidan, Mohamad Roumié and Pierre Masri
Pages
221-224
DOI
10.4028/www.scientific.net/AMR.324.221
Citation
A. Constant, P. Godignon, "Characterization of Nitrided Gate Oxide Formed by RTP for SiC MOSFET Application", Advanced Materials Research, Vol. 324, pp. 221-224, 2011
Online since
August 2011
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Price
$32.00
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