Paper Title:
Annealing Effects on Electrical and Optical Properties of N-ZnO/P-Si Heterojunction Diodes
  Abstract

The effects of post fabrication annealing on the electrical characteristics of n-ZnO/p-Si heterostructure are studied. The nanorods of ZnO are grown by aqueous chemical growth (ACG) technique on p-Si substrate and ohmic contacts of Al/Pt and Al are made on ZnO and Si. The devices are annealed at 400 and 600 °C in air, oxygen and nitrogen ambient. The characteristics are studied by photoluminescence (PL), current–voltage (I-V) and capacitance - voltage (C-V) measurements. PL spectra indicated higher ultraviolet (UV) to visible emission ratio with a strong peak of near band edge emission (NBE) centered from 375-380 nm and very weak broad deep-level emissions (DLE) centered from 510-580 nm. All diodes show typical non linear rectifying behavior as characterized by I-V measurements. The results indicated that annealing in air and oxygen resulted in better electrical characteristics with a decrease in the reverse current.

  Info
Periodical
Chapter
Chapter II: Characterizations Techniques and Properties
Edited by
Maher Soueidan, Mohamad Roumié and Pierre Masri
Pages
233-236
DOI
10.4028/www.scientific.net/AMR.324.233
Citation
S. M. Faraz, M. N. Alvi, A. Henry, O. Nour, M. Willander, Q. U. Wahab, "Annealing Effects on Electrical and Optical Properties of N-ZnO/P-Si Heterojunction Diodes", Advanced Materials Research, Vol. 324, pp. 233-236, 2011
Online since
August 2011
Export
Price
$35.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Akimasa Kinoshita, Takashi Nishi, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, Kazuo Arai
Abstract:The reaction and phase formation of the Ti/SiC Schottky contact as a function of the annealing temperature (400~700oC) were investigated....
643
Authors: K. Kuriyama, K. Matsumoto, M. Ooi, K. Kushida
Abstract:Multiple-energy nitrogen ions (energies:1 to 100 keV and a net concentration:2.24 x 1020 cm-3) are implanted into ZnO bulk single crystals...
1361
Authors: Wen Wu Zhong, Fa Min Liu, Qin Yi Shi, Wei Ping Chen
Chapter 1: Advanced Materials Science
Abstract:Al and Sb codoped ZnO thin films were prepared through a sol-gel spin coating method on glass substrates and annealed in different...
42