Paper Title:
Electrical and Optical Properties of Indium-Modified SeSbTe Thin Films for Low Power Memory Devices
  Abstract

The electrical and optical characteristics of indium doped Se2Sb2Te6 phase-change alloy are studied. It is found that adding indium to Se2Sb2Te6 alloy (In0.3Se2Sb2Te6) increased the crystallization temperature and reduced the electrical conduction activation energy. The capacitance-temperature measurements showed a drastic change in the capacitance of the modified film when the temperature approaches the crystallization temperature, and eventually the capacitance becomes negative and nonlinear. The negativity and nonlinearity in the capacitancevoltage dependence can be attributed to the growth of conductive crystalline islands by increasing the temperature.

  Info
Periodical
Chapter
Chapter II: Characterizations Techniques and Properties
Edited by
Maher Soueidan, Mohamad Roumié and Pierre Masri
Pages
245-248
DOI
10.4028/www.scientific.net/AMR.324.245
Citation
H. Ghamlouche, S. T. Mahmoud, N. Qamhieh, A. I. Ayesh, "Electrical and Optical Properties of Indium-Modified SeSbTe Thin Films for Low Power Memory Devices", Advanced Materials Research, Vol. 324, pp. 245-248, 2011
Online since
August 2011
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Price
$32.00
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