Paper Title:
Modeling of the Boron Emitter Formation Process from BCl3 Diffusion for N-Type Silicon Solar Cells Processing
  Abstract

This work is devoted to the study of boron doping diffusion process for n-type silicon solar cells applications. Deposition temperature is an important parameter in the diffusion process. In this paper we investigate its influence using an industrial scale furnace [1] (LYDOPTM Boron), which is developed by Semco Engineering. We especially used a numerical model (Sentaurus) in order to further understand the boron diffusion mechanism mainly with respect of the diffusion temperature. The model calibration is based on boron concentration profiles obtained by SIMS (Secondary Ion Mass Spectrometry) analysis. We observed that the boron profiles could be correctly simulated by a single fitting parameter. This parameter, noted kBoron which is connected to the chemical reaction kinetics developed at the interface between the boron silicon glass (BSG) and the silicon substrate

  Info
Periodical
Chapter
Chapter II: Characterizations Techniques and Properties
Edited by
Maher Soueidan, Mohamad Roumié and Pierre Masri
Pages
261-264
DOI
10.4028/www.scientific.net/AMR.324.261
Citation
J. Armand, C. Oliver, F. Martinez, B. Semmache, M. Gauthier, A. Foucaran, Y. Cuminal, "Modeling of the Boron Emitter Formation Process from BCl3 Diffusion for N-Type Silicon Solar Cells Processing", Advanced Materials Research, Vol. 324, pp. 261-264, 2011
Online since
August 2011
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$32.00
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