Paper Title:
Weak Localization and Universal Conductance Fluctuations on Epitaxial Graphene Grown on the C-Face of 8°off-Axis 4H-SiC Substrates
  Abstract

We report magnetotransport measurements in single epitaxial graphene layers grown on the C-face of an 8° off-axis 4H-SiC substrate using high temperature annealing conditions with a graphite cap covering the sample. The graphene sheets were found p-type doped, with mobilities varying between 1000 and 11000 cm²/V.s from device to device at 1.6 K. We examine the signature of weak localization and universal conductance fluctuations at weak magnetic field and we show that the phase coherence lengths extracted from the two phenomena are in satisfactory agreement.

  Info
Periodical
Chapter
Chapter II: Characterizations Techniques and Properties
Edited by
Maher Soueidan, Mohamad Roumié and Pierre Masri
Pages
269-272
DOI
10.4028/www.scientific.net/AMR.324.269
Citation
B. Jabakhanji, N. Camara, C. Consejo, B. Jouault, "Weak Localization and Universal Conductance Fluctuations on Epitaxial Graphene Grown on the C-Face of 8°off-Axis 4H-SiC Substrates", Advanced Materials Research, Vol. 324, pp. 269-272, 2011
Online since
August 2011
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Price
$32.00
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