Paper Title:
RBS Study of Multilayer Structure Material of Si/SiO2 Nano Films
  Abstract

An absorber-emitter system was fabricated using a multi-layer structure of amorphous silicon and silicon oxide thin films. The layers were deposited using RF magnetron sputtering system. The thin films were alternated in a periodic structure to form a one-dimensional photonic crystal. Each period in the crystal consisted of one layer of 57 nm thick silicon and a 100 nm thick silicon oxide layer. Several samples were prepared consisted on different periods (N= 1, 2, 3, 4, 5 and 10). Rutherford Backscattering Spectrometry technique (RBS) was used to verify the number of layers and their alternation, checking the thicknesses and determine the real stoichiometry in each layer of Si and SiOx.

  Info
Periodical
Chapter
Chapter II: Characterizations Techniques and Properties
Edited by
Maher Soueidan, Mohamad Roumié and Pierre Masri
Pages
310-313
DOI
10.4028/www.scientific.net/AMR.324.310
Citation
M. Roumie, S. Abboudy, M. Al Sabbagh, H. Abu-Safe, M. Soueidan, B. Nsouli, "RBS Study of Multilayer Structure Material of Si/SiO2 Nano Films", Advanced Materials Research, Vol. 324, pp. 310-313, 2011
Online since
August 2011
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Price
$32.00
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